Renesas Expands 5G mmWave Beamformer Portfolio with Transmitter Output Power Capability

Renesas Electronics Corporation expanded its 5G beamformer IC family with two new dual-polarization mmWave devices optimized for 2 x 2 antenna architecture for 5G and broadband wireless applications with best-in-class performance at n257, n258 and 261 bands. The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets sit on a small 5.1 x 5.1 mm BGA package and feature the industry’s highest Tx output power capability in Si—delivering more than 15.5dBm linear output power (note 1) per channel. With this combination, Renesas enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.

The new F5288 and F5268 ICs feature a unique dynamic array power (DAP) technology that enables high efficiency operation at linear output power levels programmable from 10 up to 16 dBm. This makes the third-generation ICs ideal for use in mobile and fixed wireless applications with a wide range of output power requirements. This flexibility allows communications customers to reduce design times by repurposing their antenna array designs across different applications. 

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