GaAs MESFET for Hi-Rel Applications



RFMW announced availability of discrete devices from Microwave Technology (MwT). The MwT-9F GaAs MESFET delivers 26.5 dBm P1dB at 12 GHz and is ideally suited to applications requiring high gain and medium linear power in the 500 MHz to 26 GHz frequency range. Small signal gain is 11 dB. Offered in a 485 x 315 micron chip, the MwT-9F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 1 x 108 hours at 150°C channel temperature.



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