Additions to Microchip’s lineup of GaN RF power devices include MMICs and discrete transistors covering frequencies of up to 20 GHz. The parts combine high power-added efficiency and high linearity to meet the demands of applications ranging from 5 G to electronic warfare, satellite communications, commercial and defense radar systems, and test equipment.
Fabricated using GaN-on-silicon carbide technology, the power products provide an optimum combination of high power density and yield. They also offer high-voltage operation and longevity of more than 1 million hours at a junction temperature of 255°C.
GaN MMICs span 2 GHz to 18 GHz and 12 GHz to 20 GHz with 3-dB compression point RF output power up to 20 W and efficiency up to 25%. Bare die and packaged GaN MMIC amplifiers are available for the S-band and X-band with up to 60% power-added efficiency. Discrete HEMT devices cover DC to 14 GHz with 3-dB compression point RF output power up to 100 W and maximum efficiency of 70%.
Microchip offers board design support, as well as compact models for the new devices that allow customers to model performance and expedite the design of power amplifiers in their systems. The company’s GaN RF line comprises more than 50 devices ranging from low power to 2.2 kW.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.