Teledyne e2v HiRel Announces New 100 V High Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die



Teledyne e2v HiRel announces the new TD99102 UltraCMOS® high speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip chip part is ideal for driving Teledyne HiRel’s 100 V high reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital point-of-load (POL) modules and space motor drives.

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode GaN HEMT and power MOSFETs. The outputs of the TD99102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 20 MHz. The TD99102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for high reliability orbital motor driver and POL applications. The TD99102 is available as a bumped, flip chip die to enable minimum design footprint required for high speed switching power applications.



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