Teledyne e2v HiRel has announced the availability of a rad-tolerant UHF to S-band low noise amplifier, model TDLNA0430SEP that is ideal for use in demanding high reliability space applications where low noise figure, minimal power consumption and small package footprint are critical to mission success. This new LNA is developed on a 90nm enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) process. It is available in an 8-pin dual-flat no-lead (DFN) 2 mm x 2 mm x 0.75 mm plastic surface mount package and is qualified per Teledyne’s Space enhanced plastic flow. It is now available for immediate shipment from our DoD Trusted Facility.
The TDLNA0430SEP LNA leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver exceptional performance for UHF to S-band communication channels. The amplifier delivers a gain of 21.5 dB from 0.3 GHz to 3 GHz while maintaining a noise figure of less than 0.35 dB and an output power (P1dB) of 18.5 dBm. The device should be biased at a VDD of +5.0 volts and IDDQ of 60mA and an evaluation kit is also available for customer evaluation.
“Today we’re releasing our latest plastic space qualified LNA for harsh environment applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “With a noise figure of less than 0.35 dB coupled with ease of use from a positive single supply voltage, we believe this new product will enable system designers with a superior solution for a variety of applications including, space-based communication, phased array radar and electronic warfare (EW) system applications.”
The TDLNA0430SEP is TID radiation tolerant to 100 krad (Si), making it an excellent choice for satellite communication systems by increasing the power of radio signals with minimal noise and distortion which can degrade digital signals.