Infineon expands GaN HEMT lineup

Infineon is adding two more families of high and medium voltage GaN transistors to its portfolio of CoolGaN HEMTs spanning 40 V to 700 V. According to the company, this expansion will enable customers to use gallium nitride in a broader array of applications that help drive digitalization and decarbonization.

G5 and G3 generations of CoolGaN devices are manufactured on 8-in. in-house foundry processes in Malaysia and Austria. The 650-V G5 family addresses applications in consumer, data center, industrial, and solar markets. The medium voltage G3 transistor series supports four voltage classes: 60 V, 80 V, 100 V, and 120 V. It also includes a 40-V bidirectional switch. The G3 family targets motor drive, telecom, data center, solar, and consumer applications.

The CoolGaN 650-V G5 will be available in Q4 2024. The medium voltage CoolGaN G3 will be available in Q3 2024. Samples are available now. For more information on Infineon’s CoolGaN high-electron-mobility transistors (HEMTs), click here.

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