NXP Introduces 2-Stage Airfast® Power Amplifier Module for LTE & 5G Systems from 3400 to 3600 MHz


NXP Introduces 2-Stage Airfast® Power Amplifier Module for LTE & 5G Systems from 3400 to 3600 MHz

The A5M35TG040-TC from NXP is a fully integrated Doherty power amplifier module engineered for wireless infrastructure applications. It operates over a frequency range of 3400 to 3600 MHz, providing a gain of 30 dB. This module provides an average output power of 10.5 W and 87 W of maximum power with PAE of up to 47.9%. Its design makes it ideal for use in massive MIMO systems, outdoor small cells, and low power remote radio heads, catering to the demands of TDD LTE and 5G systems. The A5M35TG040-TC incorporates Airfast® technology, a proprietary innovation designed to enhance the performance and efficiency of RF power amplifiers in wireless communication systems.

Key characteristics of the A5M35TG040-TC features a two-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. This combination provides advanced high performance in a compact form. The thermal path is separated from the electrical/solder connection path, enhancing thermal dissipation. This amplifier module is fully matched with a 50-ohm input/output and is DC blocked, which simplifies the integration process.

This amplifier is fabricated using advanced LDMOS and GaN technologies. These technologies are known for their high gain, low noise, and excellent linearity, making them ideal for RF and microwave circuits. The advanced fabrication process enhances the module’s reliability and performance, ensuring it meets the stringent demands of modern communication systems.

Click here to learn more about the A5M35TG040-TC from NXP.



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