The TSHF5211, an 890-nm infrared emitting diode from Vishay, delivers a typical radiant intensity of 235 mW/sr at a drive current of 100 mA. According to the manufacturer, this represents a 50% increase over previous-generation devices.
Based on a surface emitter chip, the TSHF5211 offers a temperature coefficient of VF of -1.0 mV/K. It also provides a narrow ±10° half angle of intensity and switching times of 15 ns. These features make the high-intensity emitter well-suited for smoke detectors and industrial sensors, as it enables good spectral matching with silicon photodetectors in these applications.
The TSHF5211 IR emitting diode is housed in a clear, untinted leaded plastic package. Samples and production quantities are available now, with lead times of 20 weeks for large orders.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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