ST has launched its fourth-generation STPOWER SiC MOSFETs, offering smaller size and greater efficiency for future EV traction inverters. Set to be available in 750-V and 1200-V classes, these devices will enhance energy efficiency and performance in 400-V and 800-V bus traction inverters, bringing SiC advantages to mid-size and compact EVs.
According to ST, Gen 4 SiC MOSFETs feature significantly lower RDS(on) compared to previous generations, reducing conduction losses. They support faster switching speeds, which lead to lower switching losses. Gen 4 technology also offers greater durability under dynamic reverse bias conditions, surpassing the AQG 324 automotive standard. Additionally, the die size of Gen 4 devices is 12% to 15% smaller than Gen 3 at the same RDS(on) at 25°C, enabling more compact power converter designs.
ST has completed qualification of its fourth-generation SiC platform for the 750-V class and expects to qualify the 1200-V class by the first quarter of 2025. Commercial availability of 750-V and 1200-V devices will follow, enabling designers to target applications from standard AC-line voltages to high-voltage EV batteries and chargers.
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