United Monolithic Semiconductors (UMS) has introduced the CHA6161-QKB, a new 3-stage power amplifier solution specifically designed for space applications, but can also be used in a wide range of microwave systems. It operates over a frequency range from 17 to 21.5 GHz. This amplifier delivers a saturated output power of 2.8 W with a gain of more than 30 dB and a power-added efficiency (PAE) of 43%.
This power amplifier IC is developed using a robust monolithic, GaN-on-SiC HEMT process. It requires a DC supply voltage from 12 to 20 V and consumes 30-120 mA of current. This RoHS-compliant GaN power amplifier is available in a low-cost, leadless surface-mount package that measures 4 x 4 mm.
The CHA6161-QKB complies with the moisture sensitivity level 3 (MSL3) rating.