Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses in high- and medium-power switched-mode power supplies for AI servers, EV chargers, and renewable energy equipment.
With thermal cycling onboard, the TOLL package reduces PCB footprint, enabling compact system designs. In SMPS applications, it can also help lower system-level manufacturing costs.
The Q-DPAK expands Infineon’s topside-cooled product family, which includes CoolSiC, CoolMOS, CoolGaN, and OptiMOS devices. Designed for maximum power density and efficiency, these devices achieve 95% direct heat dissipation, allowing both sides of the PCB to be used for improved space management and reduced parasitic effects.
The 650-V CoolSiC G2 MOSFETs in TOLL packages are available with on-resistance values ranging from 10 mΩ to 60 mΩ. Q-DPAK variants are available with on-resistance values of 7 mΩ, 10 mΩ, 15 mΩ, and 20 mΩ.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
googletag.cmd.push(function() { googletag.display(‘div-gpt-ad-native’); });
–>
The post Infineon expands package choices for SiC MOSFETs appeared first on EDN.