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Earlier this month, among great fanfare and attended by key players in the wide bandgap semiconductor industry and state officials, I attended the unveiling of the new 6″ silicon carbide (SiC) fab located on the technology research park of the University of Arkansas Power Group (UA Power Group) at Fayetteville, in Northwest Arkansas.
Called MUSiC (multi-user silicon carbide), the new fab is claimed to provide a unique open-access, multi-project wafer (MPW) model enabling collaborative prototyping and research across academia, government, and industry. The idea is to provide a national sandbox for silicon carbide creativity with a path to commercialization,
Executives attending – who also happened to be alumni from the university – came from companies such as Wolfspeed, GlobalFoundries, onsemi, Microchip, ST Microelectronics, Texas Instruments, joining university officials and students to celebrate the opening.
Seamless transition from low volume prototype to high volume manufacture
Nestled alongside the High-Density Electronics Center (HiDEC) packaging facility and and system-level demonstration and testing at the National Center for Reliable Electric Power Transmission (NCREPT), a 6 MVA test facility, the new MUSiC fab claims to be the first open-access SiC fab facility in the United States dedicated to silicon carbide research, prototyping, and large-scale commercialization.
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Since MUSiC’s processes align with semiconductor industry standards, including XFAB’s process technology, the aim is to allow for seamless transition from low-volume prototyping to high-volume manufacturing.
Announced a few months ago, the MUSiC fab was subsequently unveiled this month (November 2025) at an opening ceremony that emphasized to industry and government officials that this was a significant milestone for the U.S. and for the state of Arkansas. In a briefing to media at the opening, Alan Mantooth, distinguished professor and executive director (and founder) of the UA Power Group, said, “The focus of this new MUSiC fab is on an open SiC fabrication facility capable of delivering low volume prototyping and multi-project wafers, compatible with XFAB’s process technology.”
Watch EE Times video interview with Alan Mantooth, distinguished professor and executive director (and founder) of the UA Power Group.
He added that MUSiC would be a center of excellence for silicon carbide, and act as a national and global sandbox for startups and established companies wanting to develop SiC based power electronics products and manufacture small volumes in industry established processes that allow easy migration to full volume fabs elsewhere.
He said that many commercial foundries are not set up for small runs, hence the MUSiC fab idea resulted from conversations with XFAB about addressing this challenge. In the official announcement, he added, “This facility represents more than a building — it’s the foundation for America’s next generation of energy and mobility technologies. Our vertically integrated research — from materials to systems — allows us to train students, serve industry, and innovate at every level of the power electronics ecosystem.”
The fab factbook: facilities, funding, process technology
The facility features a state-of-the-art 8-bay cleanroom, expandable to 10 bays in phase 2, within a 22,000-square-foot building—one of the most advanced SiC research and prototyping environments in the nation, according to the announcement.
The fab’s process flow is compatible with commercial X-FAB standards, bridging academic innovation with scalable manufacturing capability. The UA Power Group said as a national facility, it supports end-to-end SiC device development, from epitaxy and fabrication to packaging and systems-level integration. It complements the UA Power Group’s vertically integrated research ecosystem — known for advancing technologies “from materials to systems.”
Funding for the fab came in part by the National Science Foundation’s (NSF) Mid-Scale Research Infrastructure Program, with support from ARL/ARO and XFAB. The aim of the MUSiC fab is to provide a unique open-access, multi-project wafer (MPW) model enabling collaborative prototyping and research across academia, government, and industry.
Tom Johnston, senior X-FAB Texas manager and chairman of the MUSiC external advisory Board, said, “From lab to fab, MUSiC provides a clear on-ramp. It’s alignment with industry standards and X-FAB’s manufacturing capability helps convert prototypes into qualified, high-reliability silicon carbide devices—quickly. By standardizing interfaces and providing foundry-ready design enablement, MUSiC helps our teams move from tape-out to ramp with fewer surprises. That’s real value in the race to bring SiC solutions to market.”
Feeding talent pipeline
The fab’s purpose goes beyond a low volume run MPW and prototyping facility, since it will also serve as a hands-on training ground for UA students and visiting researchers nationwide.
The fact that the fab sits alongside design and systems testing means this would potentially create an educational pipeline that prepares graduates for careers and research in power electronics, energy, and semiconductors. And the UA Power Group said the open-access model welcomes academic, government, and private-sector collaborators, offering unique opportunities for prototyping, small-volume production, and custom process development, all designed to accelerate innovation and workforce readiness.
Here are some of the statements from the official announcement:
Dean Kim Needy, Dean of the College of Engineering at UA, said, “MUSiC solidifies the University of Arkansas as a leading national training ground for semiconductor engineers and researchers. By providing our students and faculty with direct access to advanced fabrication, packaging, and testing environments, we are preparing the workforce that will lead America’s semiconductor renaissance. This facility embodies our mission to educate, innovate, and collaborate at the highest levels — right here in Arkansas.”
Mantooth added, “MUSiC will give students from Arkansas and across the U.S. access to world-class SiC fabrication capabilities. That exposure will advance their skills, empower research excellence, and feed directly into the nation’s energy and transportation industries.”
Excited about helping national mission
What was really evident at the launch event was the excitement that Arkansas was doing something very important for the nation in terms of meeting national security as far as semiconductor innovation and manufacturing was concerned. It’s a reflection of the continuing national and global interest in achieving semiconductor sovereignty.
As you’ll see from the prepared statements below, there really is a belief that the fab and what it represents is a significant milestone for the U.S. in terms of achieving leadership in power electronics research and manufacturing, and especially silicon carbide as a result of the MUSiC fab.
[EE Times also captured some of the sentiments of officials and university representatives in the video here. In this video interview, you can hear the thoughts of U.S. Congressman Steve Womack, Peter Wilson, from the University of Bath U.K. and Juan Carlos, a retiree from the University of Arkansas; and Margaret Sova McCabe, Vice Chancellor, Research and Innovation, at the University of Arkansas and Ardy Sidhwa, Chief Technology Officer, Pure Wafer.]
For example, in the official statements, University of Arkansas Chancellor Charles Robinson said, “MUSiC is a powerful example of our land-grant mission in action. Our responsibility has always been to turn knowledge into progress, and MUSiC does exactly that. This facility will give students hands-on experiences that prepare them for success in a high-tech workforce while helping our researchers push the boundaries of what’s possible in materials science and semiconductor technology. In doing so, it will strengthen Arkansas’ economy, improve lives across the nation and help safeguard America’s long-term security and prosperity.”
And then, U.S. Representative Steve Womack said, “The technology that will emerge from the MUSiC fab is foundational to our economic strength and national security. The University of Arkansas will serve as ground zero for this important work, developing scalable technologies that will bolster our ability to compete in the global marketplace. I have been a proud supporter of this fab from day one because I understand how it will help us address the challenges that stifle domestic innovation while also attracting top talent to our state. I look forward to seeing the real-world impact MUSiC will make, not only here in Arkansas but across the nation and the world.”
To round off the official statements, Arkansas State Attorney General Tim Griffin said, “Arkansas is staking its claim as America’s next center of excellence for semiconductor manufacturing. With MUSiC and the University of Arkansas leading the charge, our state is building the foundation for a new generation of innovation, chip production, and opportunity. This investment brings with it the promise of a brighter future, one in which our children will grow up knowing they have a chance to succeed in this rapidly growing industry. Together, we can transform Arkansas into a national powerhouse for semiconductor manufacturing and good-paying jobs.”
The MUSiC fab expects to start its first material run in January 2026, with tape-out in the latter half of 2026.
See also:
Wolfspeed’s Adam Barkley On Three Common SiC Misconceptions
X-FAB’s GaN-on-Si: A Strategic Step in the Semiconductor Landscape
Silicon Carbide Growth Pivots Around AI and Energy
L&T Semiconductor, Hon Young Partner for 650V to 3300V SiC Wafer Development
A Quick Comparison of Silicon Carbide (SiC) Solutions Across Leading Manufacturers – Part 2