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The alliance targets growing SiC demand in electric vehicles and energy systems
L&T Semiconductor Technologies Ltd (LTSCT) has formed a long-term partnership with Hon Young Semiconductor (HYS) to jointly develop high-voltage silicon carbide (SiC) wafers, ranging from 650V to 3300V, for automotive, industrial, and energy applications. The wafers will be manufactured at HYS’s fabrication facilities in Taiwan.
Dr. Sandeep Kumar, CEO of LTSCT, revealed that the company considered multiple wafer manufacturers but ultimately selected HYS. “HYS’s expertise is concentrated on SiC wafer fabrication. They were selected as our preferred partner for opportunities requiring a certain readiness level, pricing structure, and supply chain resiliency,” he told EE Times in a set of written responses.
The partnership focuses on developing SiC wafers in the 650V to 3300V range that serve as the base for high-voltage power devices such as SiC MOSFETs and Schottky barrier diodes (SBDs). “These components are key enablers of high-efficiency power conversion and are increasingly replacing conventional silicon-based devices like IGBTs and MOSFETs in next-generation systems due to lower switching losses, better thermal performance, and higher system efficiency,” Kumar explained.
On the targeted focus on the 650V to 3300V range, Kumar added, “This range is particularly relevant to automotive, industrial, and energy sectors, where SiC devices improve energy efficiency.”
LTSCT said the strongest demand for high-voltage power devices is coming from electric vehicles (EVs), renewable energy systems, and data centers. In EVs, SiC devices are used in onboard chargers, traction inverters, and DC fast-charging systems. In renewable energy, they enhance efficiency in solar inverters and wind power converters. Industrial applications include motor drives, power supplies, and high-voltage converters for automation and heavy machinery.
Beyond SiC MOSFETs and Schottky barrier diodes, LTSCT works with other foundry partners for additional power and analog semiconductor devices.
The partnership is expected to improve supply reliability and competitive pricing for LTSCT’s global customers. “Customers will benefit from stable supply and pricing that enables access to reliable, energy-efficient products,” Kumar said.
LTSCT is also investing strategically in SiC research and product development to drive innovation in high-performance power solutions. Early success metrics include moving smoothly from prototyping to customer validation, followed by scaling production for mass manufacturing. The partnership also opens opportunities for intellectual property creation and joint development of next-generation power solutions, Kumar revealed.
“As a fabless company, our strength in design and innovation allows us to generate IP through strategic partnerships. Working on high-voltage semiconductor chip design with HYS’s SiC platforms creates opportunities for developing patentable technologies,” Kumar explained.
The initiative aligns with LTSCT’s roadmap for automotive and industrial power technologies. Using HYS’s fabrication capabilities, the company aims to accelerate product development, maintain quality and reliability standards, and scale production to meet global demand.
