AOS has introduced two MOSFETs—the 25‑V AONC40212 and 80‑V AONC68816—in 3.3×3.3‑mm source-down DFN packages with double-side cooling. This packaging supports high power density in DC/DC intermediate bus converters and meets the strict thermal demands of AI servers and data centers.
The MOSFETs use an optimized top-clip design on the exposed drain, enabling double-sided thermal transfer to remove heat efficiently. Compared with single-sided devices, this approach reduces thermal stress and heat buildup. The large top clip achieves a low maximum thermal resistance of 0.9 °C/W, enhancing thermal performance in demanding applications.
The AONC40202 and AONC68816 MOSFETs support continuous drain currents of 405 A and 119 A, respectively, at 25 °C, with pulsed currents up to 644 A and 476 A. The devices have maximum on-resistances of 0.7 mΩ for the 25-V part and 4.7 mΩ for the 80-V part, while maintaining junction temperatures up to 175 °C. Bottom-side thermal resistance is 1.1 °C/W for both devices.
Available now with a lead time of 14–16 weeks, the AONC40202 and AONC68816 cost $1.85 and $1.95 each in lots of 1000 units.