MILLIBEAM, a developer of high-performance RF and microwave solutions, introduces its GaN power amplifier portfolio with integrated signal-chain solutions designed for next-generation wireless infrastructure and radar systems. This PA line-up, built around its HEAVISIDE GaN technology platform, addresses the growing demand for efficient, compact, and highly linear amplification in 5G NR N79 deployments and C-band phased-array radar applications.
As network operators and radar system designers push for higher efficiency and reduced complexity, MILLIBEAM’s H4W1A1 pre-driver amplifier and H4E1N1 power amplifier combination offers a streamlined approach to PA chain design. Together, the two devices create a complete amplification path capable of delivering the gain and output power needed to drive antennas directly from transceiver or DAC outputs, without requiring intermediate gain stages.
At the front end of the chain is the H4W1A1, a pre-driver amplifier operating from 2 GHz to 9 GHz and delivering 26 dB of gain in a compact 4 mm x 5 mm QFN package. Paired with it is the H4E1N1 final-stage power amplifier, optimized for 4.4 GHz to 5.5 GHz operation and capable of providing 31 dB gain with 20 W saturated output power. Combined, the line-up achieves a total gain of 57 dB across the 4.4 GHz to 5.5 GHz range, making it particularly well suited for transmit paths in the 5G N79 band and C-band radar systems.
One of the key advantages of this configuration is its direct compatibility with standard transceiver ICs and frequency upconverters. In 5G small-cell architectures, the line-up requires only about -15 dBm of input drive power, roughly equivalent to the output level of typical transceiver devices, eliminating the need for additional intermediate amplification stages and simplifying system design.
Linearity remains a critical performance metric in 5G infrastructure, and MILLIBEAM’s new PA chain is engineered to meet demanding requirements. For a single 100 MHz 5G NR signal, the H4W1A1 + H4E1N1 combination achieves an uncorrected adjacent channel leakage ratio (ACLR) of -32 dBc, reflecting the strong linearity performance of both the pre-driver and final-stage amplifier. With digital predistortion (DPD) applied, the line-up comfortably exceeds industry requirements, achieving ACLR better than -50 dBc, well beyond the standard 5G benchmark of -45 dBc.
The shared GaN process technology behind both amplifiers also simplifies power supply design. Because the H4W1A1 and H4E1N1 operate from the same drain voltage, all VDD supply pins can be powered from a single regulator. This unified bias architecture reduces complexity compared to mixed-technology designs, such as GaAs driver and GaN final-stage combinations, which typically require separate voltage rails and multiple regulators.
Beyond telecommunications, the same hardware platform is equally applicable to C-band phased-array radar systems. While radar operating modes may differ from 5G NR in terms of pulse width and duty cycle, MILLIBEAM notes that the H4E1N1 offers ample thermal and performance margin to accommodate these variations. Unlike 5G implementations, which generally include a DPD feedback loop between the PA and antenna, many radar systems can deploy the amplifier chain without such correction circuitry, further simplifying integration.
As part of the broader HEAVISIDE GaN PA portfolio, the H4W1A1 and H4E1N1 can also be combined with MILLIBEAM’s surface-mounted antenna-in-package solutions for complete C-band front-end architectures. Evaluation units and simulation models for both devices are now available, enabling designers to accelerate development cycles for next-generation wireless and radar platforms.
With this latest signal-chain offering, MILLIBEAM reinforces its position in the high-frequency GaN market by delivering scalable, efficient, and application-flexible amplifier solutions tailored for the evolving needs of 5G and advanced sensing systems.