Analog Devices is an exhibitor and contributor at IMS 2026. The company’s program at the show focuses on advancing RF and microwave system design through integrated signal-chain solutions, beamforming, and wideband signal processing. They are going to contribute keynote talks, demonstrations, and technical sessions to highlight innovations in phased-array systems, high-frequency signal generation, and real-time sensing and communication technologies. At Booth 23035, they will showcase their latest RF and microwave technologies.
The company’s technical sessions will focus on advances in transceiver design, beamforming, and RF front-end technologies for next-generation communication and radar systems. The presentations cover innovations such as a single-chip RF-to-Ethernet ORAN radio unit, a high-power E-band transmitter for point-to-point links, and a broadband RF switch with DC-to-12 GHz operation, highlighting improvements in integration, bandwidth, power efficiency, and system performance.
Ethernet to RF: Single Chip ORAN 4TX/4RX 5G Radio Unit Base Station Transceiver
When & Where: 8:00 – 8:20 am | Monday, June 8 | Room 252AB
SpeakerThis paper presents a new system-on-chip (SoC) for base stations that directly connects RF to Ethernet using the ORAN split 7.2A architecture. Built on 16 nm FinFET CMOS, the transceiver includes four transmitters and four receivers and supports a wide bandwidth of 660 MHz for large signals and 800 MHz for DPD synthesis. It operates across local oscillator (LO) frequencies from 400 MHz to 7.1 GHz.
The SoC supports full-band multicarrier operation across all TDD and FDD 3GPP bands for NR FR1, LTE and NB-IoT. It integrates Ethernet interfaces (2×10 Gb/s or 2×25 Gb/s), along with digital pre-distortion (DPD) and a feedback receiver. Four PLLs provide clocking for data converters, Ethernet, and RF signals.
Advanced signal processing functions such as interpolation, decimation, automatic gain control (AGC), transmit power control and calibration are handled by an ARM M4 dual-core processor and internal controllers. A separate ARM A55 quad-core processor running Linux manages overall radio unit control. The total power consumption of the SoC is 24.1 W when operating in dual-band FDD mode with four transmitters, four receivers and 800 MHz bandwidth.
A SiGe TXSIP for E-Band Point-to-Point Systems from 71 to 86 GHz with >32 dBm Output Power
When & Where: 9:00 – 9:20 am | Monday, June 8 | Room 252AB
SpeakerThis paper presents an all-silicon system-in-package (SiP) transmitter designed for E-band point-to-point microwave links, covering frequencies from 71 GHz to 86 GHz. The solution integrates an upconverter, a variable gain amplifier and two power amplifiers into a compact and low-cost 19 mm × 20 mm LGA package with a WR12 waveguide interface.
The design combines 64 individual amplifier channels within the integrated power amplifiers, achieving a saturated output power (PSAT) of more than 32 dBm. It also meets 5G NR error vector magnitude (EVM) requirements at high output levels, supporting 1 GSym/s signals at 29 dBm for 4-QAM, 28 dBm for 16-QAM and 26 dBm for 64-QAM, making it suitable for high-capacity wireless links.
A Fully Differential DC-Capable RF SPDT Switch in SOI
When & Where: 11:10 – 11:30 am | Tuesday, June 9 | Room 252AB
SpeakersThis paper introduces a fully differential RF SPDT switch built on SOI technology, designed to support both DC and broadband RF operation in a single device. The switch operates from DC up to 12 GHz while handling ±8 V common-mode voltage and up to 31 dBm differential RF power.
The design uses a series-shunt architecture with four stacked transistors per branch, along with distributed DC tracking loops that extend operation up to 20 MHz. This approach helps overcome the usual trade-off between low-frequency power handling and switching speed. A dedicated start-up scheme also enables operation with a ±12 V supply in a 3.3 V process.
Measured results show less than 1 dB insertion loss and strong linearity, with greater than 34 dBm IP1dB and around 60 dBm IP3. This makes the switch suitable for high-speed differential signal paths and applications that require both DC and RF performance, such as instrumentation and mixed-signal systems.
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IMS 2026 (IEEE MTT-S International Microwave Symposium) is the world’s premier RF and microwave conference, bringing together thousands of industry professionals from around the globe to explore the latest technologies, tools, and technical developments.