Teledyne HiRel Semiconductors Introduces Isolated GaN Gate Driver for High Efficiency Power Conversion Systems

Teledyne HiRel Semiconductors, a business unit of Teledyne Technologies Incorporated and a leading supplier of high-reliability semiconductor solutions, with more than a decade of experience in gallium nitride (GaN) for aerospace, defense, space and industrial applications, announced the release of the TDGD85110EP, an isolated, single-channel gate driver that simplifies the implementation of GaN transistors in high performance power conversion systems. 

As power systems evolve toward higher efficiency, greater power density and smaller size and weight, designers are increasingly adopting GaN technology, whose higher switching frequencies shrink magnetic components but raise the bar for gate-drive performance. The TDGD85110EP meets that demand by integrating signal isolation and an isolated bias supply into a single compact device, eliminating the need for external secondary-side bias supplies or high-side bootstrap circuits. The result is a lower component count, simpler design and more efficient system to support applications such as ac-dc and dc-dc power supplies, battery management systems, motor drives, fast-charging infrastructure, uninterruptible power supplies (UPS) and aerospace and defense power systems.