QSiC Dual3 1200-V half-bridge MOSFET modules from SemiQ address the efficiency and thermal demands of liquid-cooled AI data centers. Two of the series’ six devices offer an RDS(on) of just 1 mΩ and achieve a power density of 240 W/in.3 in a 62×152-mm package. The modules are available with or without a parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
QSiC Dual3 is designed to replace silicon IGBT modules with minimal redesign, reducing both size and weight while maintaining efficiency. All SiC MOSFET die are screened using wafer-level gate-oxide burn-in tests exceeding 1350 V. The modules also feature low junction-to-case thermal resistance, enabling the use of smaller, lighter heatsinks.
The Dual3 lineup includes the following part numbers:
Rated for junction temperatures from −40°C to +175°C, the QSiC modules are also suited for grid converters in energy storage systems, industrial motor drives, uninterruptible power supplies, and EV applications.
Learn more about the QSiC Dual3 modules here.